sfh614a document number 83670 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 1 i179060 1 2 4 3 e c a c pb p b -free e3 optocoupler, phototransistor output, 300 v bv ceo features ? high isolation test voltage, 5300 v rms high collector-emitter voltage, v ceo = 300 v standard plastic dip-4 package lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection csa 93751 description the sfh614a features a high collector-emitter volt- age and high isolation voltage. these couplers have a gaas infrared emitting diode emitter, which is opti- cally coupled to a silicon pl anar phototransistor detec- tor, and is incorporated in a plastic dip-4 package. the coupling devices are designed for signal trans- mission between two electric ally separated circuits. order information for additional information on t he available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause pe rmanent damage to the device. func tional operation of the device is not implied at these or any other condition s in excess of those given in the operatio nal sections of this document. exposure to absolute maximum rating for extended periods of t he time can adversely affect reliability. input part remarks sfh614a ctr > 50 %, dip-4 SFH614A-X009 ctr > 50 %, smd-4 (option 9) parameter test condition symbol value unit reverse voltage v r 6.0 v dc forward current i f 60 ma surge forward current t 10 si fsm 2.5 a derate linearly from 25 c 1.33 mw/c total power dissipation p diss 100 mw
www.vishay.com 2 document number 83670 rev. 1.4, 26-oct-04 sfh614a vishay semiconductors output coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing require ments. typical values are c haracteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input parameter test condition symbol value unit collector-emitter voltage v ceo 300 v emitter-collector voltage v eco 7.0 v collector current i c 50 ma t 1.0 ms i c 100 ma derate linearly from 25 c 2.00 mw/c total power dissipation p diss 150 mw parameter test condition symbol value unit derate linearly from 25 c 3.33 mw/c total power dissipation p tot 250 mw isolation test voltage between input and output, climate acc. to iec 60068-1 : 1988 (t = 1.0 s) v iso 5300 v rms creepage distance 7.0 mm clearance 7.0 mm insulation thickness between emitter and detector 0.4 mm comparative tracking index acc. to din iec 112/vde 0303, part 1 : 06-84 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? storage temperature range t stg - 55 to +150 c ambient temperature range t amb - 55 to +100 c junction temperature t j 100 c soldering temperature max. 10 s, dip soldering: distance to seating plane 1.5 mm t sld 260 c parameter test condition symbol min ty p. max unit forward voltage i f = 10 ma v f 1.15 1.5 v reverse current v r = 6.0 v i r 0.02 10 a capacitance v r = 0 v, f = 1.0 mhz c o 14 pf
sfh614a document number 83670 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 3 output coupler current transfer ratio switching characteristics typical characteris tics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i ce = 100 abv ceo 300 v emitter-collector breakdown voltage i ec = 10 abv eco 7.0 v collector-emitter dark current v ce = 10 v i ceo 15 1.0 a collector-emitter capacitance v ce = 10 v, f = 1.0 mhz c ce 8.0 pf parameter test condition symbol min ty p. max unit collector-emitter saturation voltage i f = 20 ma, i c = 1.0 ma v cesat 0.3 v coupling capacitance v i-o = 0 v, f = 1.0 mhz c c 0.5 v parameter test condition symbol min ty p. max unit current transfer ratio i f = 10 ma, v ce = 10 v ctr 50 % parameter test condition symbol min ty p. max unit turn on time v ce = 2.0 v, i c = 2.0 ma, r l = 100 ? t on 6.0 s turn off time v ce = 2.0 v, i c = 2.0 ma, r l = 100 ? t off 6 s rise time v ce = 2.0 v, i c = 2.0 ma, r l = 100 ? t r 3.0 10 s fall time v ce = 2.0 v, i c = 2.0 ma, r l = 100 ? t f 5.0 12 s figure 1. forward current vs. forward voltage isfh614a_01 100.0 10.0 1.0 0.1 .01 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 forward current, i f (ma) forward voltage, v f (v) figure 2.colletoremitterar currents.colletoremitter voltage isfh614a_02 10000 1000 100 10 1 0 0 50 100 150 200 250 300 350 collector-emitter voltage, v ce (mv) 100c 25c 0c collector current, i c (ma)
www.vishay.com 4 document number 83670 rev. 1.4, 26-oct-04 sfh614a vishay semiconductors figure 3. collector current vs. collector emitter voltage figure 4. collector current vs. collector emitter voltage figure 5. switching waveform isfh614a_03 0 5 10 15 20 25 collector-emitter voltage, v ce (mv) collector current, i c (ma) 0 100 200 300 400 500 100c 25c C40c i f =20ma isfh614a_04 0 100 200 300 400 500 7 6 5 4 3 2 1 0 collector-emitter voltage, v ce (mv) C40c 25c 100c collector current, i c (ma) i f =10ma isfh614a_06 10% 90% input pulse output pulse t r t on t f t off fiure 6.sithinshemati isfh614a_07 v o =v ce r l v cc i f f = 5.0 khz df = 50%
sfh614a document number 83670 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 5 package dimensions in inches (mm) i178027 .255 (6.48) .268 (6.81) 1 2 4 3 .179 (4.55) .190 (4.83) pin one id .030 (.76) .045 (1.14) 4 typ. .100 (2.54) .130 (3.30) .150 (3.81) .020 (.508 ) .035 (.89) 10 3C9 .018 (.46) .022 (.56) .008 (.20) .012 (.30) .031 (.79) typ. .050 (1.27) typ. .300 (7.62) typ. .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) .050 (1.27) iso method a min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. 18449 option 9
www.vishay.com 6 document number 83670 rev. 1.4, 26-oct-04 sfh614a vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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